? semiconductor components industries, llc, 2005 august, 2005 ? rev. 7 1 publication order number: NTP75N03L09/d NTP75N03L09, ntb75n03l09 power mosfet 75 amps, 30 volts n?channel to?220 and d 2 pak this logic level vertical power mosfet is a general purpose part that provides the ?best of design? available today in a low cost power package. avalanche energy issues make this part an ideal design in. the drain?to?source diode has a ideal fast but soft recovery. features ? ultra?low r ds(on) , single base, advanced technology ? spice parameters available ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperatures ? high avalanche energy specified ? esd jedac rated hbm class 1, mm class b, cdm class 0 ? pb?free packages are available typical applications ? power supplies ? inductive loads ? pwm motor controls ? replaces mtp75n03hdl and mtb75n03hdl in many applications d g n?channel s 75 amperes, 30 volts r ds(on) = 8 m to?220 case 221a style 5 1 2 3 4 75n 03l09g ayww 1 gate 3 source 4 drain 2 drain 75n 03l09g ayww 1 gate 3 source 4 drain 2 drain d 2 pak case 418aa style 2 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information marking diagrams & pin assignments http://onsemi.com 75n03l09 = device code a = assembly location y = year ww = work week g = pb?free package 1 2 3 4
NTP75N03L09, ntb75n03l09 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 30 vdc drain?to?gate voltage (rgs = 10 m ) v dgb 30 vdc gate?to?source voltage ? continuous v gs 20 vdc non?repetitive (tp 10 ms) v gs 24 vdc drain current ? continuous @ t c = 25 c ? continuous @ t c = 100 c ? single pulse (tp 10 s) i d i d i dm 75 59 225 adc apk total power dissipation @ t c = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1) p d 125 1.0 2.5 w w/ c w operating and storage temperature range t j and t stg ?55 to 150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 38 vdc, v gs = 10 vdc, l = 1 mh, i l (pk) = 55 a, v ds = 40 vdc) e as 1500 mj thermal resistance ? junction?to?case ? junction?to?ambient ? junction?to?ambient (note 1) r jc r ja r ja 1.0 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using the minimum recommended pad size. ordering information device package shipping ? NTP75N03L09 to?220 50 units/rail NTP75N03L09g to?220 (pb?free) 50 units/rail ntb75n03l09 d 2 pak 50 units/rail ntb75n03l09g d 2 pak (pb?free) 50 units/rail ntb75n03l09t4 d 2 pak 800 tape & reel ntb75n03l09t4g d 2 pak (pb?free) 800 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTP75N03L09, ntb75n03l09 http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ?source breakdown voltage (note 2) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (negative) v (br)dss 30 34 ?57 ? ? vdc mv c zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 2) gate threshold voltage (note 2) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.6 ?6 2.0 ? vdc mv c static drain?to?source on?resistance (note 2) (v gs = 5.0 vdc, i d = 37.5 adc) r ds(on) ? 6.5 8.0 m static drain?to?source on resistance (note 2) (v gs = 10 vdc, i d = 75 adc) (v gs = 10 vdc, i d = 37.5 adc, t j = 125 c) v ds(on) ? ? 0.52 0.35 0.68 0.50 vdc forward transconductance (notes 2 & 4) (v ds = 3 vdc, i d = 20 adc) g fs ? 58 ? m dynamic characteristics (note 4) input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? 4398 5635 pf output capacitance c oss ? 1160 1894 transfer capacitance c rss ? 317 430 switching characteristics (notes 3 & 4) turn?on delay time (v gs = 5.0 vdc, v dd = 20 vdc, i d = 75 adc, r g = 4.7 ) (note 2) t d(on) ? 16 30 ns rise time t r ? 130 200 turn?off delay time t d(off) ? 65 110 fall time t f ? 105 175 gate charge (v gs = 5.0 vdc, i d = 75 adc, v ds = 24 vdc) (note 2) q t ? 57 75 nc q 1 ? 11 15 q 2 ? 34 50 source?drain diode characteristics forward on?voltage (i s = 75 adc, v gs = 0 vdc) (i s = 75 adc, v gs = 0 vdc, t j = 125 c) (note 2) v sd ? ? 1.19 1.09 1.25 ? vdc reverse recovery time (note 4) (i s = 75 adc, v gs = 0 vdc dl s /dt = 100 a/ s) (note 2) t rr ? 37 ? ns t a ? 20 ? reverse recovery stored charge (note 4) t b ? 17 ? c q rr ? 0.023 ? 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. 4. from characterization test data.
NTP75N03L09, ntb75n03l09 http://onsemi.com 4 v gs = 4 v 1.6 1.4 1 1.2 0.8 0.6 1 100 1000 120 90 135 75 105 0 150 0.006 0 90 2.6 60 0.4 0.2 i d , drain current (amps) 30 v gs , gate?to?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (amps) 10 0.0085 0.008 0.0075 0.007 50 40 30 0.0065 0.006 0.0055 0.005 0.004 20 60 70 120 figure 3. on?resistance vs. drain current and temperature i d , drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d , drain current (amps) r ds(on) , drain?to source resistance ( ) r ds(on) , drain?to source resistance ( ) figure 5. on?resistance variation temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to source resistance (normalized) i dss , leakage (na) 120 ?50 50 25 0 ?25 75 125 150 0.5 2.5 3 2 1.5 3.5 14 080 60 40 100 20 12 0 0.007 0.005 0.004 0.008 0.009 5 152025 10 30 v ds , drain?to?source voltage (volts) 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 60 45 30 15 0.0045 80 90 100 10 100 v gs = 10 v v gs = 8 v v gs = 6 v v gs = 5 v v gs = 4.5 v v gs = 3 v v gs = 2.5 v t j = 25 c t j = 25 c t j = ?55 c t j = 100 c v ds 10 v t j = 25 c t j = ?55 c t j = 100 c v gs = 5 v v gs = 5 v t j = 25 c v gs = 10 v v gs = 0 v v gs = 5.0 v i d = 37.5 a t j = 125 c t j = 100 c v gs = 3.5 v
NTP75N03L09, ntb75n03l09 http://onsemi.com 5 1600 1000 600 800 400 200 0 20 10 10000 25 6000 6 8 c, capacitance (pf) 2000 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge 1 1000 9.1 6.2 4.7 100 10 2.2 10 20 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) e as , single pulse drain?to?source avalanche energy (mj) 12000 25 75 50 100 125 150 0.0 0.8 0.6 0.4 0.2 1. 0 10 25 5 15 0 30 75 gate?to?source or drain?to?source voltage (volts) 0 4000 8000 4 2 0 2 4 6 8 10121416182022 40 45 50 55 60 65 70 35 1400 1200 v ds = 0 v v gs = 0 v t j = 25 c c rss c oss c iss v dd = 15 v v gs = 5 v t r t d(off) t d(on) t f v gs = 0 v t j = 25 c i d = 75 a t j = 25 c i d = 75 a v gs v ds q g , total gate charge (nc) v gs , gate?to?source voltage (v) 0102030405060 0 0 2 4 6 8 10 1 0 2 0 3 0 i d = 75 a t j = 25 c v gs q 2 q 1 q t q 3 v ds
NTP75N03L09, ntb75n03l09 http://onsemi.com 6 package dimensions style 5: pin 1. gate 2. drain 3. source 4. drain to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j
NTP75N03L09, ntb75n03l09 http://onsemi.com 7 package dimensions d 2 pak case 418aa?01 issue o *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1 style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.036 0.51 0.92 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f 0.310 ??? 7.87 ??? m 0.280 ??? 7.11 ???
NTP75N03L09, ntb75n03l09 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTP75N03L09/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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